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| MPSA55 ... MPSA56 MPSA55 ... MPSA56 PNP Version 2006-07-25 Power dissipation Verlustleistung E BC General Purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren fur universellen Einsatz PNP 625 mW TO-92 (10D3) 0.18 g 16 Plastic case Kunststoffgehause Weight approx. - Gewicht ca. 18 9 Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack 2 x 2.54 Dimensions - Mae [mm] Maximum ratings (TA = 25C) Collector-Emitter-volt. - Kollektor-Emitter-Spannung Collector-Base-voltage - Kollektor-Basis-Spannung Emitter-Base-voltage - Emitter-Basis-Spannung Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Peak Collector current - Kollektor-Spitzenstrom Peak Base current - Basis-Spitzenstrom Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open - VCEO - VCBO - VEBO Ptot - IC - ICM - IBM Tj TS Grenzwerte (TA = 25C) MPSA55 60 V 60 V 4V 625 mW 1) 500 mA 1A 200 mA -55...+150C -55...+150C MPSA56 80 V 80 V Characteristics (Tj = 25C) Min. DC current gain - Kollektor-Basis-Stromverhaltnis 2) - IC = 10 mA, - VCE = 1 V - IC = 100 mA, - VCE = 1 V - IC = 100 mA, - IB = 10 mA Base-Emitter voltage - Basis-Emitter-Spannung ) 2 Kennwerte (Tj = 25C) Typ. - - - - - - Max. - - 0.25 V 1.2 V 100 nA 100 nA hFE hFE - VCEsat - VBE MPSA55 MPSA56 - ICBO - ICBO 100 100 - - - - Collector-Emitter saturation voltage - Kollektor-Emitter-Sattigungsspg. 2) - IC = 100 mA, - VCE = 1 V Collector-Base cutoff current - Kollektor-Basis-Reststrom - VCB = 60 V, (E open) - VCB = 80 V, (E open) 1 2 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig wenn die Anschlussdrahte in 2 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% http://www.diotec.com/ (c) Diotec Semiconductor AG 1 MPSA55 ... MPSA56 Characteristics (Tj = 25C) Emitter-Base cutoff current - Emitter-Basis-Reststrom - VEB = 4 V, (C open) Gain-Bandwidth Product - Transitfrequenz - IC = 100 mA, - VCE = 1 V, f = 100 MHz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren fT RthA 50 MHz - < 200 K/W 1) MPSA05, MPSA06 - - IEB0 - - 100 nA Kennwerte (Tj = 25C) Min. Typ. Max. 120 [%] 100 80 60 40 20 Ptot 0 0 TA 50 100 150 [C] Power dissipation versus ambient temperature 1) Verlustleistung in Abh. von d. Umgebungstemp.1) 1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig wenn die Anschlussdrahte in 2 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden http://www.diotec.com/ (c) Diotec Semiconductor AG 2 |
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